Так трудно сказать "молодцы"?
На картинке снизу 350Вт. Остальное смотрите сами:
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...a conventional 350W push-pull RF power transistor using a beryllia package. This uses seven 25W die per side to achieve 350W in total. The silicon die are eutectically attached to the beryllia substrate that is then soldered to a copper-tungsten metal flange. Copper-tungsten is used rather than pure copper to achieve a good thermal coefficient of expansion match between beryllia and the flange.
In a conventional package the beryllia substrate serves three functions, namely it provides electrical isolation, a low thermal impedance path to ground, and the electrical interface to the external circuit. One approach to eliminating the beryllia substrate would be to simply replace it with diamond. However, this would make the part very expensive due to the size of diamond required and it would necessitate the development of an overhanging external lead technology that would further add to the cost. To make the technology affordable it is essential to minimize the area of diamond used without making it so small that it adversely affects the improvement in thermal impedance, and to not require the diamond to provide the electrical interface to the external circuit.
Как видите, речь
только о цене вопроса. Это всё было к тому что алмаз конструктивных проблем в мощном приборе не создаёт.